【作者】 张铁民； 缪国庆； 金亿鑫； 于淑珍； 蒋红； 李志明； 宋航；

【Author】 ZHANG Tie-min~(1,2) MIAO Guo-qing~1 JIN Yi-xin~1 YU Shu-zhen~(1,2) JIANG Hong~1 LI Zhi-ming~1 SONG Hang~1 (1.Key Laboratory of Excited State Processes,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Science,Changchun 130033,China; 2.Graduate University of Chinese Academy of Sciences,Beijing 10039,China)

【机构】 中国科学院长春光学精密机械与物理研究所激发态物理重点实验室；

【摘要】 采用低压金属有机化学气相沉积（LP-MOCVD）技术,在 InP 衬底上外延生长 In_0.82Ga_0.18As。研究生长温度对Ino 82Gao.18As表面形貌、结晶质量和ⅡI族源铟镓比的影响。扫描电子显微镜观察样品的表面形貌。x射线衍射用于表征材料的组分和结晶质量。结果表明,生长温度强烈地影响 Ino.8zGao 18As材料的表面形貌和结晶质量。样品的表面形貌随生长温度的增加由典型的2D生长模式过渡到3D生长模式。x射线衍射曲线半峰全宽为l 224、1 454、2 221、2 527 s,分别对应于生长温度为410、430、450、470℃四个样品。此外,III族源铟镓比值也随生长温度的增加从0.42增大到4.62。更多还原

【Abstract】 In_0.82Ga_0.18As was grown on InP substrates by LP-MOCVD.It was studied that the influence of growth temperature on surface morphology,crystalline quality,and ⅡⅡn/ⅢGa ratio of In_0.82Ga_0.18As.The surface morphology was observed by scanning electron microscopy.The composition and crystalline quality of materials were characterized by X-ray diffraction.The results of experiment showed that the growth temperature could influence the surface morphology and the crystalline quality of the In_0.82Ga_0.18As.更多还原