【作者】 吴俊； 魏青竹； 巫艳； 陈路； 于梅芳； 乔怡敏； 何力；

【Author】 WU Jun, WEI Qing-zhu, WU Yan, CHEN Lu, YU Mei-fang, QIAO Yi-min, HE Li (Research Center for Advanced Materials and Devices Shanghai Institute of Technical Physics, CAS Shanghai 200083, China)

【机构】 中国科学院上海技术物理研究所半导体材料与器件研究中心；

【摘要】 对原位As4掺杂MBEHgCdTe材料退火前后的电学性质进行了研究。原生样品以及N型退火样品的测试结果显示,随着As掺杂进入HgCdTe的同时,样品中产生了额外的Hg空位,并且在样品中引进了一种N型深能级结构。不同Hg分压下的激活退火结果显示,高温汞压下退火可以获得P型MBEHgCdTe材料。但是,真空退火结果显示As很难被激活。说明在激活退火过程中As在各个格点之间转移时,外界的Hg起重要作用。更多还原

【Abstract】 The study of the electrical properties of the arsenic doped as-grown and annealed MBE HgCdTe is presented. The results of the as-grown samples and N-type annealed samples show that additional VHg is produced and there are some donors which have deeper energy level during arsenic doping into HgCdTe. The results of annealed samples under different mercury pressures show that P-type MBE HgCdTe could be obtained by doping with the As4 source and annealing with high temperature. But result of vacuum-anneals show arsenic is hard to activated as acceptors in this condition. It shows that the ambient mercury plays an important role in the site-transfer process during the activation anneals.更多还原