【作者】 王瑛伟； 程灏波；

【Author】 WANG Ying-wei1, CHENG Hao-bo2 (1.University Science and Technology Beijing, Beijing 100083, China; 2.Beijing Institute of Technology, Beijing 100081, China)

【机构】 北京科技大学材料科学与工程学院； 北京理工大学光电工程系；

【摘要】 采用电阻加热水平物理输运法对生长ZnSe晶体的原料进行提纯,使其纯度达到5N(99.999%)。利用Bridgman单晶生长方式生长ZnSe晶体,所得晶体尺寸为φ35mm×100mm。在对晶体性能进行分析后,对晶体进行切割、研磨、抛光,获得粗糙度为光学四级的晶体器件。晶体抛光后未镀膜,在0.5~22μm的波长范围,平均透过率达到60%以上。晶体镀膜后,在波长为10.6μm处的透过率可达98%以上。更多还原

【Abstract】 The physical vapor transportation method (PVT) is adopted to purify ZnSe (5N) polycrystalline materials at 850±10 ℃. High quality ZnSe single crystals are grown by high-pressure Bridgman method (HPB) at 1 530 ℃ under argon gas atmosphere. The effects of temperature of purifing process, the oxygen percentage and pressure factors on the crystal growth are studied. The homogeneous analysis shows that the ZnSe crystal obtained is highly homogenous and holonomic. Optical properties analysis shows that the ZnSe single crystal possesses high refractive index, low absorption coefficient and the transmittance coefficient is above 60% at infrared range. Crystal coating, in the transmission wavelength of 1.06 μm up to 98%.更多还原