节点文献
掺氮二氧化钛（TiO2）薄膜的SIMS剖析
The Doping Profile Analysis for N-doped TiO2 Thin Films by SIMS
【Author】 FANG Pei-yuan CAO Yong-ming Department of Materials Science,Fudan University,Shanghai 200433,China MI Lan Department of Optical Science,Fudan University,Shanghai 200433,China
【摘要】 <正>环境污染是全世界关注的焦点问题。世界上每年会产生无数有毒固体、气体和液体废物,污染了空气和水源。如何利用太阳光这一绿色能源来消除这些有害物质,是目前很受关注的研究课题。近年来,在广泛应用于降解空气和水污染物的各种氧化物半导体光催化材料中,纳米结构的二
【Abstract】 TiO2 as one of the photocatalysis functional materials provides high catalysis activities.The organic contamination can be degraded into CO2 and H2.However,the band gap of TiO2 materials make its photocatalysis function only in the limitation of UV range of the solar energy,which significantly reduce the usage efficiency of the solar energy.The band gap of TiO2 is narrowed after doping and its optical response spectrum extend to the visual range of the spectrum,so that the usage efficiency of the solar energy is enhanced.The results from experiments show that the N-doping has the best results among the dopings.The SIMS analysis is able to provide the doping profile of the Nitrogen in the TiO2 thin films.
- 【会议录名称】 2007年全国质谱学会无机质谱、同位素质谱、质谱仪器和教育学专业委员会学术交流会论文集
- 【会议名称】2007年全国质谱学会无机质谱、同位素质谱、质谱仪器和教育学专业委员会学术交流会
- 【会议时间】2007-10
- 【会议地点】中国湖北宜昌
- 【分类号】X505
- 【主办单位】中国质谱学会无机质谱专业委员会、中国质谱学会同位素质谱专业委员会、中国质谱学会质谱仪器与教育学专业委员会