【作者】 郭杰； 王静宇； 李振豪；

【Author】 Guo Jie Wang Jing-yu Li Zhen-hao Yang YuKunming Institute of Physics, Kunming 650223Department of Material and Engineering, Yunnan University, Kunming 650091

【机构】 昆明物理研究所；

【摘要】 在SiO2/Si衬底上采用直流磁控溅射沉积复合金属薄膜Pt/Ti作为电极,薄膜电导率高,结构致密且表面无空洞等缺陷;在Pt/Ti/SiO2/Si结构衬底上采用射频磁控溅射沉积锆钛酸铅薄膜(Pb(Zr1-xTix)O3,PZT),经退火后结晶形成具有热释电性质的钙钛矿结构薄膜,热释电系数达到1.1531×10-(?)Ccm-2k-1。更多还原

【Abstract】 Pt/Ti multiple metal films, as the bottom electrode, have been deposited on SiO2/Si substrate by DC sputtering. The electrode, with high conductance and compact structure, has no disfigurement such as holes; PZT thin film can be obtained by rf-magnetron control sputtering on Pt/Ti/SiO2/Si. X rays diffraction(XRD) and atomic force microscope(AFM) revealed that at 600 ℃ annealing temperature the PZT film had crystallized into ABO3 perovskite phase with pyroelectric properties. The pyroelectric coefficient is 1. 1531×10-(?) Ccm-5k-1.更多还原