【作者】 廖国进； 巴德纯； 闻立时； 刘斯明； 阎绍峰；

【Author】 Liao Guojin Ba Dechun Wen Lishi Liu Siming Yan Shaofeng (Faculty of Mechanical Engineering and Automation,Northeastern University, shenyang 110004,China; Faculty of Mechanical Engineering and Automation, Liao-ning Institute of Industry, jinzhou 121001,China; Department of surface engineering, Institute of Metal Research Chinese Academy of Science, shenyang 110016,China; Faculty of Mechanical Engineering and Automation,Beijing University of Aeronautics and Astronautics, 100083 China)

【机构】 东北大学机械与自动化学院； 中国科学院金属研究所表面工程部； 北京航空航天大学机械与自动化学院； 辽宁工学院机械与自动化学院；

【摘要】 中频反应磁控溅射技术近年来得到了广泛地应用。采用该技术制备的Al2O3:Ce3+薄膜具有优良的蓝色发光性能。本文采用四因素四水平正交实验方法,对中频磁控溅射法制备的Al2O3:Ce3+薄膜工艺参数进行优化,得到了制备具有良好发光性能薄膜的优化条件是:掺杂浓度1．1％,溅射总压强0．4 Pa,靶基距70 mm,氧分压比9％。结果表明,中频反应磁控溅射制备的Al2O3:Ce3+具有强烈的宽带光致发光。更多还原

【Abstract】 Medium Frequency Reactive Magnetron sputtering (MFRMS) is being widely used in many fields. Al2O3:Ce3+ films prepared by MFRMS have better luminescent characters. Al2O3:Ce3+ films deposited by MFRMS technology are studied on luminescence in the way of the four-factor and four-level orthogonal experimental method. It is found that the optimized fabrication parameters of Al2O3:Ce3+ thin films with good luminescent properties are that cerium doping concentration is 1. 1 at. %, the distance of the targets and substrate is 70 mm, the oxygen partial pressure rate is 9%, and the sputtering pressure is 0. 4 Pa. The experimental results shows that the Al2O3:Ce3+ films prepared by MFRMS technology have good wide bend emitting property.更多还原