【作者】 刘钧锴； 邓金祥； 陈浩； 田凌； 陈光华；

【Author】 Liu Junkai, Deng Jinxiang, Chen Hao, Tian Ling and Chen Guanghua School of Materials Science & Engineering, Beijing University of Technology, Beijing, 100022, China; School of Applied Mathematics & Physics, Beijing University of Technology, Beijing, 100022, China; School of Physics, Lanzhou University, Lanzhou, 730000, China

【机构】 北京工业大学材料学院； 北京工业大学应用数理学院； 兰州大学物理学院；

【摘要】 用常规射频(RF)溅射系统,采用三步法在p型Si(111)上高重复率地制备出高品质的立方氮化硼(c-BN)薄膜。通过对c-BN薄膜生长过程的分析,找出了传统两步法制备高品质的c-BN薄膜重复率不高的原因。在两步法之前增加了使湍流层结构氮化硼(t-BN)转化为斜方六面体结构的氮化硼(r-BN)的步骤,即将形核过程分也为两步,使重复率显著提高。傅立叶变换红外吸收光谱的结果表明:当第一步偏压为180 V,时间为5 min时,得到了立方相含量为85％的c-BN薄膜。更多还原

【Abstract】 A three-step technique has been developed to grow high quality cubic boron nitride(c-BN)fims by RF magnetron sputtering on p-tyoe Si(111)substrate.Possible reason responsible for the low reproducibibility of the film,synthesized by conventional two-step growth, was tentatively discussed. An extra step, turning turbostratic boron nitride (t-BN) into rhombohedral boron nitride, was done before the two-stop growth,that is.nucleation experiences two steps.Consequently,the reproducibility of the film considerably increases.The films were characterized with Fourier transform infrared spectroscopy(FTIR) .The results show that c-BN films with cubic phase content being 85% were grown at a bias of 180 V in the first step lasting for 5 minutes.更多还原