【作者】 谭娜； 段淑卿； 张庆瑜；

【Author】 Tan Na, Duan Shuqing and Zhang Qingyu State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian, 116024, China

【机构】 大连理工大学三束材料改性国家重点实验室；

【摘要】 采用脉冲磁控溅射技术制备了Er／Yb共掺ZnO薄膜,对不同退火温度下薄膜晶体结构和光致荧光(PL)光谱进行了系统分析,探讨了退火处理所导致的晶体结构变化以及反应新相的生成对Er3+离子激活、薄膜PL光谱的影响。研究结果表明,退火处理所导致的Er3+离子PL光谱的变化与薄膜的微观状态之间有着密切的联系。在室温到1050℃退火温度范围内,Er／Yb共掺ZnO薄膜为多晶结构,薄膜荧光强度的增加主要是薄膜内氧含量增加、缺陷减少使Er3+离子荧光寿命增加以及 Er3+离子激活比例增加所致。当退火温度超过1050℃,荧光强度的明显降低是由新相生成造成缺陷增加以及薄膜内氧含量降低引起。在整个退火温度范围内,薄膜的PL光谱都表现为同一种光谱特性,即明锐的多峰结构,这说明Er3+在ZnO和 Zn2SiO4中的周围环境非常相似。更多还原

【Abstract】 Er/Yb co-doped ZnO films were grown by pulsed reactive magnetron sputtering and annealed at different temperatures. Influence of its microstructures on photoluminescence(PL)was studied. The results show that the annealing temperature significantly affects its mi-crostructures and PL spectrum of Er3 + ions. At an annealing temperature below 1050 ℃, the film is polycrystalline. An increase of oxygen content and a decrease of defects density result in an increase of both Er3 + ion lifetime and proportion of the activated Er3 + ion, which are responsible for higher PL intensity. However,at a temperature higher than 1050 ℃ ,PL intensity drastically decreases,possibly because of defects formation and reduction of oxygen content.更多还原