【作者】 李刚； 蔡长龙； 杭凌侠； 严一心；

【Author】 Li Gang,Cai Changlong,Hang Lingxia.Yan Yixin (Department of Opticalelectronic Science and Engineering , Xi’ an Institute of Technology, Xi’ an ,710032 China )

【机构】 西安工业学院光电科学与工程系；

【摘要】 薄膜厚度的均匀性是影响沉积方法应用的一个重要的因素。利用脉冲真空电弧离子镀技术在si基片上沉积出类金刚石薄膜,采用轮廓仪对膜的厚度进行了测量,研究了不同工艺参数对薄膜均匀性的影响。实验结果表明:脉冲离子源阴极和基片的距离、主回路工作电压以及沉积频率对薄膜均匀性有不同程度的影响,根据分析结果,找出最佳工艺参数。通过比较两种离子源的结果表明:离子源结构对其镀膜均匀性有较大的影响。更多还原

【Abstract】 Diamond-like carbon films were grown on silicon substrate by pulsed arc ion deposition. Its thickness distribution was studied with a profilemeter to understand influence of various growth parameters on the film thickness distribution. The results showed that three factors, including the distance between the cathode of the pulsed ion-source and the substrate, operating voltage in the main circuit and the pulsed-arc frequency,affect the film thickness distribution to a different degree. These factors can be optimized to grow high quality films with fairly uniform thickness distribution. We also found that the structures of different ion sources may also affect film thickness distribution.更多还原