【作者】 王蜀霞； 王万录； 廖克俊； 朱亚波； 方亮； 王必本；

【Author】 Wang Shuxia,Wang Wanlu.Liao Kejun,Zhu Yabo,Fang Liang, Wang Biben( Department of Applied Physics , Chongqing University, Chongqing ,400044 China )

【机构】 重庆大学数理学院；

【摘要】 本文采用热灯丝CVD法在硅尖上制备了纳米金刚石膜,并研究了硅尖上纳米金刚石膜的场发射性质。实验结果表明,硅尖上纳米金刚石膜的场发射特性与硅平面上生长的多晶金刚石膜比较,有了极大的提高。硅尖上纳米金刚石膜场发射开启电场最小为2.7 V/μm,而多晶金刚石膜为4.5 V/μm。利用电子隧穿模型对实验结果进行了理论分析,研究表明实验结果与理论分析相符合。更多还原

【Abstract】 Field emission characteristics of nanofilms of diamond grown on silicon tip surfaces with hot filament chemical vapor deposition(CVD) , were studied. We found that field emission onset field of the nanofilms of diamond on Si tips can be as low as 2.7 V/jnm,whereas that of the polycrystalline diamond films grown on flat Si substrate is 4. 5 V/μm. The mechanism of the emission threshold field lowering was tentatively explained with an electron tunneling model and our theoretical calculation agress well with the experimental results.更多还原