【作者】 范智勇； 陈国荣； 莫晓亮； 姚彦； 杨剑； 蔡亲佳； 顾海华； 华中一；

【Author】 Fan Zhiyong,Chen Guorong ,Mo Xiaoliang, Yao Yan,Yang Jian,Cai Qinjia,Gu Haihua,Hua Zhongyi ( Dept. of Materials Science , Fudan University , Shanghai, 200433 China)

【机构】 复旦大学材料科学系；

【摘要】 研究了金属有机电双稳薄膜材料Ag(TCNQ)在STM针尖下的电特性,观察到在纳米尺度下Ag(TCNQ)从高阻态跃迁到低阻态的微分负阻现象,阻态间的跃迁可以重复进行,其阈值电压比交叉电极“三明治”结构的情况要低得多。另外,研究了Ag(TCNQ)电存储特性,包括写入、读出和擦除特性,结果表明Ag(TCNQ)可以作为超高密度的随机存储器的材料。更多还原

【Abstract】 The electrical property of organometallic material Ag(TCNQ) is investigated with STM. Electrical bistablity and negative differential resistance were found under STM tip, and the transition between high and low resistance states can be repeated. The threshold voltage is much lower than the one on the sandwiched sample. Nanoscale electrical storage properties,including writing,reading and erasing properties were investigated. The result shows that Ag(TCNQ)can be expected to use as a good ultrahigh density data storage material.更多还原