【作者】 杨乾声； 陈赓华； 杜寰； 赵士平； 徐凤枝；

【Author】 Yang Qiansheng Chen Genghua Du Huan Zhao Shiping Xu Fengzhi(Institute of Physics, CAS, Beijing 100080)

【机构】 中国科学院物理研究所；

【摘要】 用磁控溅射方法及选择铌阳极氧化和选择铌刻蚀工艺制备了Nb/Al-AlO_x/Nb全铌隧道结,给出了工艺要点。根据全铌结的参量,设计了全铌隧道结dcSQUID。制成的dc SQUID的传输函数δV/δφ～1.4mV/φ₀,其本征能量分辨率达到24 h。更多还原

【Abstract】 The Nb/Al-AlOx/Nb all-niobium tunnel junctions were fabricated by dc magnetron sputtering, with selective niobium etching process and selective niobium anodiza-tion process. DC SQUIDs were designed and fabricated according to the parameters of the Nb/Al-AlOx/Nb junctions. The SQUIDs fabricated have their flux-to-voltage transfer coefficient δV/δΦ=1. 4mV/Φ0, and intrinsic energy resolution ε～24h.更多还原