【作者】 游小龙； 余志明； 吴迪； 吴晓斌； 魏秋平； 王婷；

【Author】 YOU Xiao-long YU Zhi-ming WU Di WU Xiao-bin WEI Qiu-ping WANG Ting (School of Materials Science and Engineering,Central South University,Changsha 410083,China)

【机构】 中南大学材料科学与工程学院；

【摘要】 对 Si 作不同的表面处理,采用热丝化学气相沉积（HFCVD）方法,使用不同直径的钨丝进行金刚石薄膜沉积;利用场发射扫描电镜、拉曼光谱对沉积的金刚石薄膜进行研究。结果表明:当钨丝的直径为0.5 mm 时, 沉积的金刚石薄膜的形核率可达到10¹⁰cm^-2,晶粒均匀,且为纳米晶粒,晶粒长大的过程不明显,以二次形核为主进行沉积;采用磁控溅射预镀少量金属 Sb 的基体沉积金刚石薄膜的形核率没有明显的改善,而晶粒的长大过程却很明显,说明金属 Sb 可以明显的改善晶粒长大速度。更多还原

【Abstract】 Through hot filament chemical vapor deposition （HFCVD） method,the diamond films were deposited on p-Si （111） substrate by different treatments of matrix surface and tungsten filaments of different diameters.The nucleation of diamond films was investigated with field emission scanning electron microscope （FESEM） and Raman spectrometer. The results show that the nucleation rate of diamond films is up to 10¹⁰ cm^-2 when the diameter of W coil is 0.5 mm,and the diamonds are nano-crystal and uniform particles,the growth of the diamond particles is not obvious.The diamond particles mainly grow up by the secondary nucleation.When the trace amount of Sb metal is coated to the substrate by magnetic-controlled sputtering,the nucleation of diamond films can not be enhanced,whereas it is obvious that the crystals grow up.Sb metal can enhance the rate of growth of crystals.更多还原