【作者】 韩杰才； 周玉锋； 张宇民； 张剑寒； 姚旺； 韩媛媛；

【Author】 HAN Jie-cai, ZHOU Yu-feng, ZHANG Yu-ming, ZHANG Jian-han, YAO Wang, HAN Yuan-yuan (Center for Composite Materials, Harbin Institute of Technology, Harbin 150080, China)

【机构】 哈尔滨工业大学复合材料与结构研究所；

【摘要】 介绍了使用EB-PVD法制备的Si膜性能,如膜-基结合强度、残余应力、孔隙率等。研究发现,只有当衬底温度在优化温度范围内时,膜-基系统才有优良的抗热震性及膜-基结合强度,硅膜晶体结构为柱状晶。衬底温度过高或过低都不利于膜-基系统性能的提高。但当温度比较高时,硅膜的孔隙率可能下降,却会增加膜-基系统中的残余应力。对硅膜性能影响较大的因素还有衬底表面光洁度等。更多还原

【Abstract】 The properties of silicon coating prepared by electronic beam physical vapor deposition (EB-PVD) were introduced, including the adhesion strength of coating to substrate, residual stress and porosity ratio, etc. It is found that only when the substrate temperature locates in the optimization temperature range the excellent thermal shock resistance and higher adhesion strength of coating to substrate could be got, and the crystal structure is columnar crystal. Ultra-low or ultra-high substrate temperature will do harm to the promotion of properties of coating-substrates system. However, the porosity ratio of silicon coating will be decreased and the residual stress between coating and substrate increases while the temperature of substrate increases.更多还原