【作者】 王歆； 庄志强； 陆裕东；

【Author】 WANG Xin, ZHUANG Zhi-qiang, LU Yu-dong (College of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China)

【机构】 华南理工大学材料科学与工程学院；

【摘要】 采用溶胶-凝胶技术,以可溶性无机盐为原料,柠檬酸和乙二铵四乙酸为复合螯合剂,形成溶解在乙二醇溶剂中的Pb-Mg-Nb-Ti金属复合有机盐前驱溶液。在不同材料的基底(不锈钢、玻璃和Al2O3基片/Pd-Ag、Pt 和Pt-Ag底电极)上制备了PMN-PT弛豫铁电薄膜;研究了基底材料性质对薄膜结晶状况以及相结构的影响。结果表明:物化性质与PMN-PT薄膜相近的基底起到结晶学缓冲层的作用,有利于晶体生长及钙钛矿结构相的形成。以Al2O3为基片、Pd-Ag为底电极,制备了近全钙钛矿相结构(99%)的0.9PMN-0.1PT弛豫铁电薄膜。更多还原

【Abstract】 The homogeneous, stable and stoichiometric Pb-Mg-Nb-Ti complex organic precursor was prepared by using soluble inorganic salts as raw material, citric acid and EDTA as complex chalet agent, ethylene glycol as solvent. PMN-PT relax ferroelectric thin films were deposited on different substrates (stainless steel, glass and Al2O3 substrates / Pd-Ag, Pt and Pt-Ag bottom electrode) by using this complex precursor. The influences of the substrate characteristics on the crystalline growth and phase were studied. The results show that the substrates physi-cochemically similar to PMN-PT thin films act as the crystallographic buffer layer, which benefits the crystalline growth and the formation of pervoskite phase. Nearly pure pervoskite phase (99%) of 0. 9PMN-0. 1PT relax ferroelectric thin film can be produced on Al2O3 substrate coated with Pd-Ag bottom electrode.更多还原