【作者】 马通达； 屠海令； 王敬； 陈长春； 黄文韬；

【Author】 Ma Tong-da1, Tu Hai-ling1, Wang Jing1, Chen Chang-chun2, Huang Wen-tao2 (1. Beijing General Research Institute of Nonferrous Metals, Beijing 100088; 2. Institute of Microelectronics, Tsinghua University, Beijing 100084)

【机构】 北京有色金属研究总院； 清华大学微电子所；

【摘要】 利用透射电子显微镜(TEM)和同步辐射X射线白光形貌术研究了低应变SiGe/Si异质结构应变弛豫和界面扩散。观察到SiGe外延层未发生应变弛豫,Si缓冲区和Si衬底中有颗粒状析出物。更多还原

【Abstract】 Strain relaxation of low strained SiGe/Si heterostructure and diffusion in the interface between SiGe layer and Si substrate were investigated by transmission electron microscope (TEM) and synchrotron radiation x-ray white-beam topography. No strain relaxation was observed in epitaxial SiGe layer. Particle-like precipitate was found in the Si buffer layer and Si substrate.更多还原