【作者】 乐永康；

【Author】 LE Yong-kang (Department of Physics, Fudan University, Shanghai 200433, China)

【机构】 复旦大学物理系；

【摘要】 现用自偏压辅助的射频磁控溅射在硅基片上生长氮化硼薄膜,用傅里叶变换红外光谱和俄歇电子能谱测定薄膜中立方结构的含量以及氮硼的组分比。分别研究了工作气体中氮气的含量、基片的温度和基片的偏压对立方结构生长的影响。实验结果显示:薄膜组分是否达到氮硼比为1的化学配比条件是立方结构能否生长的关键;通过选择工作气体中合适的氮气含量,立方结构的生长在室温下也能实现;然而室温条件下适合立方氮化硼生长的基片偏压范围要比在500℃时窄很多。另外还对立方氮化硼薄膜的光学应用作了展望。更多还原

【Abstract】 Cubic boron nitride films have been deposited on Si substrate by self-bias assisted radio frequency magnetron sputtering. Fourier transformed infrared spectroscopy(FTIR) and auger electron spectroscopy(AES) have been employed, respectively, to determine the cubic fraction and atomic composition of the films. The influence of the nitrogen content in the working gas, substrate temperature and substrate bias on the formation of cubic phase has been investigated. The results show that whether the stoichiometric requirement has been achieved in the growing films is decisive for the formation of cubic boron nitride; the growth of cubic boron nitride at room temperature can be realized by appropriately selecting the nitrogen content in the working gas. However, the bias window for the growth of cubic boron nitride at room temperature is much narrower than that at 500°C. In addition, a brief outlook of the optical application of cubic boron nitride is also presented.更多还原