【作者】 杨海亮； 邱爱慈； 孙剑锋； 何小平； 李静雅； 王海洋； 汤俊萍； 彭建昌； 黄建军； 任书庆； 张嘉生； 杨莉；

【Author】 Yang Hai-Liang, Qiu Ai-Ci, Sun Jian-Feng, He Xiao-Ping, Li Jing-Ya, Wang Hai-Yang, Tang Jun-Ping, Peng Jian-Chang, Huang Jian-Jun, Ren Shu-Qing, Zhang Jia-Sheng, Yang Li,

【机构】 西北核技术研究所；

【摘要】 主要给出了高功率离子束(HPIB)的产生、诊断和应用研究的初步结果。首先介绍了强箍缩反射离子束二极管的结构及工作过程,考虑阴阳极等离子体运动对二极管间隙的影响,给出了聚焦流和饱和顺位流等四个阶段的总束流和离子束流修正公式,利用这些修正公式计算的二极管总束流和离子束流强度与实测结果符合很好。还分析了提高离子束流强度和效率的方法,依据计算和分析结果调整二极管的参数,得到了峰值能量～500keV,峰值电流-160kA的高功率离子束。采用复合法对高功率离子束的参数进行了诊断:CR-39固体核径迹探测器记录通过针孔后的离子图像,活化法测量离子数目,热释光探测器监测漂移管外部的轫致辐射分布,偏压法拉第筒阵列测量束流密度分布,叠片法测量能谱。采用中性化膜和充气等方法达到束流中性化,使高功率离子束传输距离超过80cm。在高功率离子束的应用方面,给出了产生6-7MeV准单能脉冲γ射线的初步实验结果,采用飞行时间法分离和降低轫致辐射干扰,利用闪烁体探测器和半导体探测器测量了所产生的准单能脉冲γ射线强度。还给出了利用高功率离子束模拟材料的软X射线热-力学效应和进行金属材料表面改性方面的初步实验结果,并分析了利用高功率离子束产生强脉冲中子,进行状态方程和冲击波物理研究,模拟中子产生的反冲质子等其它方面的应用前景。更多还原

【Abstract】 The research results for generation, diagnostics and application of high power ion beam(HPIB) on the FLASH II accelerator are reported. The structure and principle of pinch reflex ion beam diode are introduced. The time dependent evolution of electron and ion flow in large aspect-ratio relativistic diodes is studied. The equation of Child-langmuir, weak focused-flow, intense focused-flow and parapotential flow are corrected for the reduction of diode A-K gap due to the motion of cathode and anode plasma. The diode total current and ion current were calculated with these corrected equations, and the results were consistent with the experimental data. The HPIB peak current of ~160kA with a peak energy of ~500keV was produced with super-pinch reflex ion diode. The ion number was experimentally determined by monitoring delayed radioactivity from HPIB induced nuclear reactions in a 12C target. The bremsstrahlung distribution outside of the drift tube was detected with TLDs and the shielding design was also determined. The current densities of beam were measured with biased ion collector array. The energy spectra of HPIB were measured with biased ion collector array behind a pile of thin films with different depth. The ion beams were also recorded with CR-39 detector. Being neutralized, the HPIB can be effectively transported to further than 80cm. The quasi-monoenergetic pulsed γ-rays were generated via HPIB striking "F target and measured with the PIN semiconductor detector and ST401 plastic scintillator. The research results for thermal-mechanical effects on the material irradiated by HPIB applied to simulation 1keV black radiation X ray are presented. The preliminary results of material surface modification by using HPIB are also introduced. This article also presents possible applications in generation of high intense pulsed neutrons, equation of state and shock-wave physics experiments, and so on.更多还原