【作者】 谷坤明； 汤皎宁； 李均钦； 杨钦鹏； 罗桂清； 许景幸； 李翠华；

【Author】 Gu Kunming, Tang Jiaoning, Li Junqin, Yang Qinpeng, Luo Guiqing, Xu Jingxing, Li Cuihua Department of Materials Science and Engineering, Shenzhen University; Shenzhen Key Laboratory of Special Functional Materials, Shenzhen 518060, China; Chemical and Biological Department, Normal college of Shenzhen University, Shenzhen 518060 China

【机构】 深圳大学理学院材料系深圳市特种功能材料重点实验室； 深圳大学师范学院化生系；

【摘要】 本文采用sol-gel旋涂法在抛光硅<111>晶面生长了高度C轴取向的ZnO薄膜。DSC以及XRD数据显示此溶胶系统的最佳退火温度为450℃左右,更高的退火温度将对薄膜的择优取向产生不利的影响。 SEM及AFM显示薄膜表面致密、均匀、光滑,组成薄膜的颗粒尺寸在50~100nm,并显示出良好的C轴择优取向。更多还原

【Abstract】 ZnO thin films with high c-axis orientation were prepared on polished Si <111> substrates using spin coating method. DSC and XRD data show that the optimal heat treatment temperature for our sol-gel system to form ZnO film should be near 450℃. The orientation could take disadvantage of higher temperature. Surface morphologies of the films were investigated by AFM and SEM, which also show the high c-axis orientation of grains with average size about 50~100 nm.更多还原