【作者】 李长荣； 张维敬； 杜振民； 李静波；

【Author】 LI Changrong, DU Zhenmin, LI Jingbo, ZHANG Weijing ( School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China; Institute of Physics, Academia Sinica, Beijing 100080, China)

【机构】 北京科技大学材料科学与工程学院；

【摘要】 金属有机物气相外延(MOVPE-Metal-Organic Vapor Phase Epitaxy)技术是获得III-V族化合物半导体优质外延层的重要途径,是一个涉及多元复相系统及复杂化学反应的过程。在III—V族半导体相关体系热力学特征函数的评估与优化、热力学数据库(Al-Ga-In—P-As-Sb-C-H)和(Al-Ga—In-N-C-H) 的建立与完善的基础上,本文利用相图计算(CALPHAD—CALculation of PHAse Diairams)技术,对于不同特点的Ⅲ-V族化合物半导体体系,进行了稳定平衡、亚稳平衡、条件平衡等热力学分析工作, 以及半导体外延生长成分空间-特殊要求的光电性能-衬底晶格匹配的综合优化。研究工作表明热力学计算对于Ⅲ-V族化合物半导体的MOVPE工艺辅助设计具有重要的指导意义。更多还原

【Abstract】 The Metal-Organic Vapor Phase Epitaxy (MOVPE) is one of the important techniques used to grow III-V compound semiconductors. It is a process involving multi-components, poly-phases and complex reactions. In practice, the group III sources used in MOVPE process are metal-organic compounds, such as the trimethyl-gallium (Ga(CH3)3) for Ga and the trimethyl-indium (In(CH3)3) for In, and the group V sources are V-hydrides, such as the ammonia (NH3) for N and the phosphine (PH3) for P. The carrier gas is hydrogen (H2). Generally, the thermodynamic systems concerned include the related III and V group elements as well as C and H. On the basis of the assessment and optimization of the typical thermodynamic functions of the related sub-systems and the development and improvement of the thermodynamic database of the Al-Ga-In-P-As-Sb-C-H and Al-Ga-In-N-C-H systems, using the CALPHAD (CALculation of PHAse Diagrams) approach, the thermodynamic stable equilibrium, the meta-stable equilibrium and the constraint equilibrium are analyzed for the MOVPE growth of III-V compound semiconductors of different characteristics. The comprehensive optimization of the compositional space and the dependent property together with the substrate lattice matching for the MOVPE growth of III-V semiconductors is presented. It is illustrated that the thermodynamic information is useful to the computer-assisted design for the MOVPE process of III-V semiconductors.更多还原