节点文献
基于拉曼光谱的微结构应力测试方法
Stress Measurement in MEMS Based on Raman Spectroscopy
【Author】 Sang Shengbo Xue Chenyang Xiong Jijun Zhang WendongKay Lab of Instrumentation Science & Dynamic Measurement of Ministry of Education, North University of China, Taiyuan,030051
【机构】 中北大学仪器科学与动态测试教育部重点实验室;
【摘要】 讨论了利用拉曼光谱来定量分析由单晶硅和多晶硅材料构成的微机械结构应力测试方法,说明了该方法的基本原理,推导了单晶硅应力σ与相对拉曼频移△ω及多晶硅应力τ与相对拉曼频移△ω的关系,使基于硅体系的拉曼应力测试公式体系化。应用拉曼光谱测试方法对微加速度计悬臂梁和微谐振器支撑梁进行了应力测试。
【Abstract】 This paper discussed method of quantitating the stress in single -Si and poly -Si MEMS by Raman Spec troscopy, and introduced principle of the method. The relative Raman shift △ω dependant stress σ of single -Si and poly - Si was derived, through which the systematic formulas of stress can be obtained. These results may provide references for other researchers. By using this method, the measurement of stress distribution in the cantilever of micro -acceleration and micro -resonator is realized.
【Key words】 Raman spectroscopy; single -Si; poly -Si; stress; Raman shift;
- 【会议录名称】 中国微米、纳米技术第七届学术会年会论文集(一)
- 【会议名称】中国微米、纳米技术第七届学术会年会
- 【会议时间】2005-08
- 【会议地点】中国大连
- 【分类号】TH823
- 【主办单位】中国机械工程学会