【作者】 王英； 杨明来； 张效岩； 蔡炳初； 徐东； 张亚非；

【Author】 Wang Ying Yang Minglai Zhang Xiaoyan Cai Bingchu Xu Dong Zhang YafeiNational Key Laboratory of Nano/Micro Fabrication Technology, Key laboratory for thin film and microfabrication of Ministry of Education,Shanghai Jiaotong Universityy, Shanghai, 200030 Baoding Galaxy Electronic Technology Co. Ltd. ,Baoding,Hebei,071051

【机构】 上海交通大学微米/纳米加工技术国家级重点实验室、薄膜与微细技术教育部重点实验室； 保定天河电子技术有限公司；

【摘要】 采用LB(langmuir-blodgett)排布技术制备了大面积高密度的FePt纳米粒子单层膜,利用纳米粒子单层膜作为掩模,通过反应离子刺蚀技术进行了纳米刘蚀研究。实验结果表明,采用纳米拉子单层膜作为掩模,通过控制反应离子刻蚀条件可以实现纳米级(小于50nm)的纳米点阵和纳米柱的刻蚀。更多还原

【Abstract】 This paper described the nanolithography technique utilizing FePt nanoparticles as etch masks for the fabrication of silicon pattern. The high density and large area arrangement of FePt nanoparticle monolayer on the silicon substrate was prepared by Langmuir -Blodgett (LB) technique. Subsequent patterned silicon pillars were formed by reactive ion etching. The results indicate that the control conditions of reactive ion etching are a promising method for preparing nanodot and nanopillars (<50nm) using FePt nanoparticles as etch masks.更多还原