【作者】 吴成昌； 肖夏； 赵新为； 张生才；

【Author】 Wu Chengchang Xiao Xia Zhao Xinwei Zhang Shengcai Tianjin University,Tianjin,300072 Science University of Tokyo, Tokyo, Japan, 162 - 8601

【机构】 天津大学； 东京理科大学；

【摘要】 在n-Si(4-5Ω·cm)衬底上淀积了400nm厚的纳米晶体硅(nc-Si)量子点薄膜,将其制备成场致发射的冷阴极。介绍了nc-Si量子点冷阴极的制备,场致发射特性的测试,解释了nc-Si量子点冷阴极的工作模型及电子弹道发射的原理。透射电子显微镜(TEM)对样片的结构分析证实样片中的nc-Si量子点具有很好的单晶结构;原子力显微镜(AFM)对样片的表面形貌分析表明,样片具有平滑的表面,有利于提高冷阴极的发射效率。更多还原

【Abstract】 400nm -thick nanocrystalline silicon (nc -Si) quantum dots films have been deposited on the n - Si (4-5Ω· cm) substrate, and fabricated as the cold cathode of the field emission. The fabrication process of nc -Si quantum dots cold cathode and the measurement system were described in detail. The transmission electron microscope (TEM) verifies the single crystal structure of the nc -Si quantum dots in the sample. A smooth surface of the sample is observed by atom force microscope (AFM), which is benefit for increasing the emission efficiency of the cold cathode.更多还原