【作者】 郭辉； 王煜； 张海霞； 田大宇； 张国炳； 李志宏；

【Author】 Guo Hui Wang Yu Zhang Haixia Tian Dayu Zhang Guobing Li Zhihong Beijing University, Beijing, 100871

【机构】 北京大学；

【摘要】 运用低温的PECVD方法进行了SiC薄膜的制备,通过改变关键工艺参数,如气体流量,功率等,研究工艺参数对SiC薄膜应力的影响,制备出低应力的SiC薄膜。研究了退火工艺、离子注入工艺对薄膜应力的影响,使得薄膜应力可控制,将无定形态的SiC变成微晶态SiC;解决了厚膜在高温退火下破裂的问题,将SiC薄膜的电阻率降低到10Ω·cm的量级。对SiC的抗腐蚀特性进行了研究,对比了多种湿法、干法对SIC的腐/刻蚀速率。成功地将制备的低应力SiC薄膜用于MEMS器件的抗腐蚀保护。更多还原

【Abstract】 This paper utilized low temperature PECVD to deposit SiC thin film. The influences of critical process parameters, such as gas flow rate and RF power, on the stress of SiC film was investigated. And low stress SiC film was deposited. This paper also researched the affection of annealing and ion implant process on SiC film stress. The film stress was controlled by two processes, and as -deposit amorphous SiC was transformed to crystallite SiC. The problem of film cracking during high temperature annealing was solved, and the SiC film resistivity was reduced to 10Ω·cm. The SiC film anti-erosion characteristics were also investigated,and etch rate of SiC film by several wet and dry etch techniques were measured. Finally, this paper successfully utilizes the deposited low stress PECVD SiC film as protective coating for MEMS applications.更多还原