【作者】 苏建修； 郭东明； 康仁科； 金洙吉； 李秀娟；

【Author】 Su Jianxiu, Guo Dongming, Kang Renke, Jin Zhuji, Li XiujuanKey Laboratory for Dalian University of Technology Precision & Non-traditional Machining of Ministry of Education,Dalian 116024, P. R. China

【机构】 大连理工大学精密与特种加工教育部重点实验室；

【摘要】 本文分析了目前几种常见的化学机械抛光(CMP)机中抛光头与抛光垫的运动关系,针对不同的硅片运动形式,计算了磨粒在硅片表面的运动轨迹;通过对磨粒在硅片表面上的运动轨迹分布的统计分析,得出了硅片在不同运动形式下的片内材料去除非均匀性。从硅片表面材料去除非均匀性方面,对几种抛光机的运动形式进行了比较,结果表明,弧形摆动式抛光机所产生的硅片内非均匀性最小。本文的研究为CMP机床的设计和使用中选择和优化运动参数提供了理论依据。更多还原

【Abstract】 The within-wafer-nonuniformity(WIWNU) of the wafer has long been a concern in chemical mechanical polishing(CMP). In this paper, the motion relationships between the wafer and the polishing pad in several familiar CMP machines are analyzed. According to different motion forms of wafer, the tracks of particles on wafer surface are calculated. Then by calculating the number of the pixels of particle tracks in each small square on wafer surface, the WIWNU of the wafer can be received in different motion forms. From the WIWNU, the motion forms of wafer in three types of CMP machine are compared. As a result, the CMP machine that has the carrier with an arc oscillation produces the lowest WIWNU. The results can provide theoretical guide to use and design CMP machine and optimize the motion variables of CMP.更多还原