【作者】 薛玉明； 孙云； 何青； 李凤岩； 朴英美； 刘维一； 周志强； 李长健；

【机构】 南开大学光电子所；

【摘要】 本论文通过实验制备得到CuIn_0.7Ga_0.3Se₂（CIGS）,CdS,ZnO三种半导体材料,然后根据这三种半导体的相关材料参数和实验数据,画出了它们形成异质结前后的能带图,并计算得它们的能带边失调值ΔE_c,ΔE_v。其中,CdS/CIGS的导带边失调值ΔE_c对高效率CIGS薄膜太阳电池的影响作用最大,为—0298eV（高效电池的理想值范围为0～0.4eV）,这对电池整体性能都不是很好。更多还原

【Abstract】 The junction characteristic of the heterojunction of the CIGS thin film solar cells directly influences the properties of the solar cells. Therefore, it is necessery to research the heteroj unction of the CIGS thin film solar cells systematically. By the experiments, we firstly fabricated the CuIn0.7 Ga0.3 Se2, CdS and ZnO thin films. According to their material parameters and experimental data, we attain the energy band figures before and after forming the heterojunction, and calculate their energy band offsetΔEc、ΔEv. The conduction band offset ΔEc of the CdS/CIGS, which is the key factor to influence the properties of the solar cells, is -0. 298eV(the ideal data of the high efficency solar cells are 0-0. 4 eV. ). That does harm to the properties of the solar cells.更多还原