【作者】 陈一匡； 林揆训； 罗志； 梁锐生； 周甫方；

【机构】 汕头大学物理系；

【摘要】 利用铝诱导非晶硅薄膜晶化制备多晶硅薄膜可以降低退火温度,缩短退火时间。在此基础上,通过在退火过程中加入电场加速界面处硅、铝原子间的互扩散,实现了非晶硅薄膜在更低温度下更加快速的晶化。实验结果表明,外加电场,退火温度为400℃退火时间为60min时,薄膜的晶化率接近100%;退火温度为450℃退火时间为30min时,薄膜呈现明显的晶化现象;退火温度为500℃退火时间为15min时,薄膜的X射线多晶峰强度与非晶峰强度之比为未加电场的3～4倍。更多还原

【Abstract】 Aluminum-induced crystallization of amorphous silicon (a-Si) is a suitable method for preparation of polycrystalline silicon (poly-Si) films, which can decrease annealing temperature and shorten annealing time. Biasing an electric field, which is perpendicular to the surface of the a-Si films, will accelerate the mutual diffusion of Al atoms and Si atoms on the interface during the aluminum-induced crystallization process and enhance the crystallization of the a-Si films obviously. The experiment results show that without the effect of electric field, a-Si film will not crystallize until the annealing temperature reached 500℃. While under the action of the electric field, almost all of a-Si transfers into poly-Si when the a-Si film was annealed at annealing temperature Ta=400℃ and annealing time ta = 60min; the a-Si films have obviously crystallized at Ta =450℃ and ta=30min; at Ta=500℃ and ta = 15min, the XRD intensity of crystalline silicon (c-Si) components in the films is thrice to fourfold as strong as that in the films without the effect of electric field.更多还原