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μc-SiC:H太阳电池窗口材料的研究
The Study on Microcrystalline Silicon Carbon Window Materials
【作者】 任慧志; 孙建; 郭群超; 侯国付; 薛俊明; 张德坤; 朱锋; 耿新华;
【摘要】 用P型微晶硅(Pμc-Si:H)或微晶硅碳薄膜(Pμc-SiC:H)代替非晶硅碳(Pa-SiC:H)作非晶硅薄膜太阳电池的+窗口材料,可以显著改善电池TCO/P+界面和叠层电池隧道结的接触特性,提高电池的填充因子和转换效率。本文采用七室连续RF—PECVD系统,通过调节衬底温度及精确控制B2H5的掺杂量,制备出了电导率达到10-1S/cm量级,光学带隙大于2.2eV的优质P型微晶硅碳窗口(Pμc-SiC:H)材料。
【Abstract】 Microcrystalline Silicon and Microcrystalline Silicon Carbon p-layers in amorphous silicon thin-film solar cells can improve the contact properties of interface between TCO and p+ as well as tunnel junction in double junction solar cells, resulting in remarkable improving the fill factor ( FF) and conversion efficiency of cells. In this paper, excellent microcrystalline Silicon and Microcrystalline Silicon Carbon window materials have been obtained by adjusting substrate temperature and controlling quantum of doped gas-B2H6 and CH4 accurately, whose conductivity reaches the magnitude of 10-1 S/cm and optics gap is wider than 2. 2eV .
- 【会议录名称】 21世纪太阳能新技术——2003年中国太阳能学会学术年会论文集
- 【会议名称】2003年中国太阳能学会学术年会
- 【会议时间】2003
- 【分类号】TM914.4
- 【主办单位】中国太阳能学会