【作者】 任慧志； 孙建； 郭群超； 侯国付； 薛俊明； 张德坤； 朱锋； 耿新华；

【机构】 南开大学光电子所； 河北工业大学；

【摘要】 用P型微晶硅（Pμc-Si:H）或微晶硅碳薄膜（Pμc-SiC:H）代替非晶硅碳（Pa-SiC:H）作非晶硅薄膜太阳电池的⁺窗口材料,可以显著改善电池TCO/P⁺界面和叠层电池隧道结的接触特性,提高电池的填充因子和转换效率。本文采用七室连续RF—PECVD系统,通过调节衬底温度及精确控制B₂H₅的掺杂量,制备出了电导率达到10^-1S/cm量级,光学带隙大于2.2eV的优质P型微晶硅碳窗口（Pμc-SiC:H）材料。更多还原

【Abstract】 Microcrystalline Silicon and Microcrystalline Silicon Carbon p-layers in amorphous silicon thin-film solar cells can improve the contact properties of interface between TCO and p+ as well as tunnel junction in double junction solar cells, resulting in remarkable improving the fill factor ( FF) and conversion efficiency of cells. In this paper, excellent microcrystalline Silicon and Microcrystalline Silicon Carbon window materials have been obtained by adjusting substrate temperature and controlling quantum of doped gas-B2H6 and CH4 accurately, whose conductivity reaches the magnitude of 10-1 S/cm and optics gap is wider than 2. 2eV .更多还原