【作者】 翟向坤； 李泽宏； 张波； 李肇基； 赵静；

【Author】 Zhai Xiangkun, Li Zehong, B.Zhang, Z.J.Li, Zhao Jing CAD institute, UESTC, Chengdu, China 610054

【机构】 电子科技大学微电子研究所；

【摘要】 本文提出了双栅双注入单管动态存储单元结构,该结构器件的工作基于势的变化,利用SOI的浮体效应,通过双注入来提高注入效率和减少读取时间。借助二维仿真器模拟分析,结果表明双注入性能优于习用的单注入动态存储器件。文中还分析了以MOS为基的动态存储单元结构的发展:减小芯片面积、提高集成度。动态存储单元从原来的4管、3管发展到现在的成熟产品类1T/1C,直至现今研究热点1T。更多还原

【Abstract】 Double Gate Cell with Double Injected one-transistor dynamic access structure is proposed. Based on the change of potential, using the floating effect of SOI, it worked on the high injection efficiency and lowly read-out time. The character of the Double Gate Cell with Double Injected is better than the single Injected cell by two-dimensional simulator. The development history of dynamic access cell based on MOS structure is introduced, which is considered to decrease the chip areas and to improve the integration level. DRAM cell structure changes from the original four-transistor structure to three-transistor structure, and to the mature product structure-one transistor and one capacitor (1T/1C). So far the study has focused on the one-transistor structure.更多还原