【作者】 沈剑韵； W．K．Kim； 储茂友； 黄松涛； T．J．Anderson；

【Author】 Shen Jianyun , Kim W. K , Chu Maoyou , Huang Songtao , Anderson T. J (General Research Institute for Non-Ferrous Metals of Beijing, Beijing 100088, China; Department of Chemical Engineering, University of Florida, Gainesville, FL 3261)

【机构】 北京有色金属研究总院； University of Florida；

【摘要】 利用DICTRA计算机软件,将热力学模型和动力学实验结果相结合,优化出了Se在CIS中的迁移率L。将Cu-In-Se的热力学模型和Se在α-CoInSe2中的迁移率L输入DICTRA软件,计算了不同反应温度下α-CuInSe2的增长速率,计算结果和实验吻合很好。更多还原

【Abstract】 Based on the growth rates of the CuInSe2 film at different temperatures measured by In-situ X-Ray diffraction and the thermodynamic model of the Cu-In-Se ternary system, the mobility parameter of Se in a-CuInSe2(CIS) was evaluated with the Dictra software. The good agreement of the calculated results with the experimental data shows that this reaction can be well simulated by the DICTRA software.更多还原