【作者】 陈江山； 马东阁；

【Author】 Jiangshan Chen, and Dongge Ma* State Key Laboratory of polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of the Chinese Academy of Sciences, Changchun 130022

【机构】 中国科学院长春应用化学研究所高分子物理与化学国家重点实验室；

【Abstract】 Organic-based NDR devices show potential applications in memory and logic circuits. In this work, organic diodes with negative differential resistance (NDR) and memory effects were developed. The NDR was observed in current-voltage, and reproducible. Thus, single-level and multilevel memory can be realized in this organic diodes.更多还原