【作者】 王煜； 王凡； 吴凯；

【Author】 Yu Wang, Fan Wang, Wu Kai* State Key Laboratory of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing

【机构】 北京大学化学与分子工程学院分子动态与稳态国家实验室；

【Abstract】 This study reports the interfacial reaction growth (IRG) approach to fabricating ordered porous semiconductor nanonets. By making use of the reactions of Al2O3 with other precusors at the exterior and interior interfaces of the anodic aluminum oxide (AAO) template, we have successfully prepared ordered porous metallic (Mo and Cu) and semiconductive (ZnxAlyOz and Ga2OAl2O3) nanonets. The composition, morphology and lattice structure of the ZnxAlyOz nanomaterials were simultaneously controlled. We successfully realized synthesizing large-area ZnO photonic crystal laser whose light output was spatially confined within ±10o around the surface normal direction. Single crystal GaN nanowires were prepared by treating the Ga2OAl2O3 nanonet in NH3. In addition, bifilar helix-like single crystal Zn2SnO4 nanobelt was synthesized by using aluminothermal reaction and VLS gorwth mechanism on silicon wafer. This nanobelt had a high performance in photluminescence. The above studies are of great importance in surface-mediated growth of nanomaterials, photonic crystal laser, dye-sensitized solar cell, etc.更多还原