【作者】 程树英； 钟南保； 黄赐昌； 陈岩清； 陈国南；

【Author】 CHENG Shuying1,2 ZHONG Nanbao2 HUANG Cichang2 CHEN Yanqing2 CHEN Guonan1 1 Chemistry Department , Fuzhou University, Fuzhou 350002 2 Department of Electronic Science and Applied Physics, Fuzhou University, Fuzhou 350002

【机构】 福州大学化学系； 福州大学电子科学与应用物理系；

【摘要】 用阴极恒电流沉积法制备SnS薄膜。研究了溶液的pH值、离子浓度比、电流密度等电沉积参数对薄膜组分的影响,得出制备SnS薄膜的比较理想的工艺条件为:pH=2.7,Sn2+:S2O3=1:5,J=3.0mA·cm-2,t=1.5h.。制备出了成分为Sn0.995S1.005的膜层,并用扫描2-电镜观察了该薄膜的表面形貌,用X射线衍射分析了其物相结构,表明它是具有正交结构的SnS多晶薄膜,晶粒大小不一,在200nm~1000nm之间。用阴极恒电流沉积法制备SnS薄膜。研究了溶液的pH值、离子浓度比、电流密度等电沉积参数对薄膜组分的影响,得出制备SnS薄膜的比较理想的工艺条件为:pH=2.7,Sn2+:S2O3=1:5,J=3.0mA·cm-2,t=1.5h.。制备出了成分为Sn0.995S1.005的膜层,并用扫描2-电镜观察了该薄膜的表面形貌,用X射线衍射分析了其物相结构,表明它是具有正交结构的SnS多晶薄膜,晶粒大小不一,在200nm~1000nm之间。更多还原

【Abstract】 SnS films were prepared by constant current cathodic electrodeposition. Influences ofelectrodeposition parameters, such as the pH of the electrolyte, the concentration ratio of Sn2+ andS2O3 , the current density, on the composition of the films were investigated. The experiments 2-showed that the best electrodeposition conditions for SnS films were pH=2.7,Sn2+:S2O3 =1:5, 2-J=3.0mA·cm-2,t=1.5h. The film with the composition of Sn0.995S1.005 was prepared, and it wascharacterized with XRD and SEM analysis. The as-deposited film is of polycrystalline withorthorhombic crystalline structure and grain sizes of 200nm~1000nm.更多还原