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InP基量子阱电吸收光调制器的设计与工艺实验
Design and Experiment of InP-based Multiple Quantum Wells Electroabsorption Optical Modulator
【Author】 WANG Minghua, ZHOU Jianying, LI Xihua, ZHOU Xiaoping, JIANG Xiaoqing Department of Information Science and Electronic Engineering, Zhejiang University Hangzhou 310027
【机构】 浙江大学信息与电子工程学系;
【摘要】 本文概述了量子阱电吸收光调制器设计的整个过程,从量子阱材料设计,到器件的光波导设计和微波特性设计,并给出了使用剥离法、湿法刻蚀技术制作InP基量子阱电吸收调制器的初步实验结果。InP基窄带隙量子阱材料设计相对能隙较大的GaAs量子阱材料必须考虑能带耦合效应,材料设计、光波导设计和微波特性设计是相互影响的。
【Abstract】 The whole design procedure of multiple quantum well (MQW) electroabsorptionmodulator, from quantum well material to device optical waveguide and microwaveproperties, is briefly summarized. And the elementary experiment result of MQWelectroabsorption modulator using lift-off technology and wet etching is presented. Thesimulation of InP-based narrow-band quantum well is more complicate than that ofGaAs-based quantum well. The couple of the bands have to be considered. The propertiesof material, optical waveguide and microwave properties would be influenced each other.
【Key words】 Quantum Well; Indium Phosphide; Electroabsorption; Optical Modulator;
- 【会议录名称】 大珩先生九十华诞文集暨中国光学学会2004年学术大会论文集
- 【会议名称】中国光学学会2004年学术大会
- 【会议时间】2004
- 【会议地点】中国杭州
- 【分类号】TN761
- 【主办单位】中国光学学会