【作者】 孙涛； 陈文桥； 梁晋穗； 陈兴国； 胡晓宁； 李言谨；

【Author】 SUN Tao CHEN Wenqiao LIANG Jinsui CHEN Xingguo HU Xiaoning LI Yanjin Research Center for Advanced Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai200083, China

【机构】 中国科学院上海技术物理所功能材料器件中心；

【摘要】 制备了CdTe+ZnS介质膜,将其应用于光伏探测器中,对器件的性能进行了测试,并通过理论计算,分析了器件的暗电流机构,得到一些相关的材料和器件性能参数。更多还原

【Abstract】 In this paper, The CdTe+ZnS film was achieved by sputtering and thermal evaporation, and this film was used to passivate the HgCdTe photovoltaic detector. The performance of this device was also achieved. By calculation theoretically, the dark current mechanism of this device was studied and some correlated parameters were also obtained.更多还原