【作者】 张素梅； 石家纬； 齐丽云；

【Author】 ZHANG Sumei SHI Jiawei QI Liyun College of Electronics and Engineering, Jilin University, Nation Integrated Opto-Electronics Key Laboratory, Changchun, 130023, People’s Republic of China

【机构】 吉林大学电子科学与工程学院集成光电子学国家重点联合实验室；

【摘要】 通常的DH半导体激光器,它的p-n结、非常靠近有源区或在有源区内。在器件的老化过程中,器件的暗点缺陷(DSD)和暗线缺陷(DLD)会不断增长,并向有源区移动,造成有源区中的非辐射复合中心增多,引起器件的退化,表现为器件的阈值电流变大,输出功率降低,效率下降等。设计了一种将p-n结和有源层分开的新结构的激光器,发射波长为808nm的高功率AlGaAs/GaAs单量子阱远异质结(SQW-RJH)激光器。制备了p型下波导层厚度分别为0.1μm和0.3μm的器件,对器件进行了特性测试及老化实验。与通常的激光器比,器件的阈值电流和导通电压偏大,并且,0.3μm的器件比0.1μm的器件的阈值电流大,导通电压高。更多还原

【Abstract】 For conventional high-power quantum well lasers whose p–n junctions are located in or near the active region, the dark spot defects (DSDs) and the dark line defects (DLDs) develop and move to the active layer during aging process, which increase non-radiative recombination centers and cause devices to degrade. As a result, the threshold current increases, while the output power and the differential coefficient decrease at the same times. We designed and fabricated a kind of new structure lasers―the high-power AlGaAs/GaAs remote junction heterostructure single-quantum-well semiconductor lasers, whose p-n junctions were separated from the active layer. Their emission wavelength was 808 nm. We made some devices whose p-type confinement layer thickness were 0.1μm and 0.3μm separately, then we made electrical derivative characteristic tests on these devices. We find that the threshold current and the threshold voltage of the devices are higher than the usual lasers. Moreover, the threshold current of the 0.3μm is larger than that of 0.1μm, while the threshold voltage has no evident difference.更多还原