【作者】 陈慧丹； 刘晓玉； 陈昊； 李娟； 范勇；

【Author】 CHEN Hui-dan LIU Xiao-yu CHEN Hao LI Juan FAN Yong (The College of Materials Science & Engineering,Harbin Univ.Sci.,Harbin 150040,China)

【机构】 哈尔滨理工大学材料科学与工程学院；

【摘要】 为了提高聚酰亚胺薄膜的电学性能,将纳米硅/铝氧化物掺杂到聚酰亚胺(PI)基体中,通过固定掺杂总量,调整纳米硅/铝氧化物的相对质量百分含量制备出一系列的无机纳米杂化聚酰亚胺薄膜。采用SEM(扫描电镜)表征了薄膜的表面形貌,对薄膜击穿场强、耐电晕寿命进行了测试。结果表明:无机纳米杂化聚酰亚胺薄膜与纯的聚酰亚胺薄膜相比其电性能大幅度提高。更多还原

【Abstract】 In order to improve excellent electric properties,a series of hybrid PI film was prepared by incorporating the inorganic particles into the polyamic acid matrix resin in conditions of adjusting the relative quality percentage content of nanometer silicon /aluminium oxide at the same time fixed the oxides of total doping in this paper.The films were characterized and analyzed by Breakdown Test、Corona tolerance Test、SEM etc.It turned out that a certain of homogeneous hybrid system had formed,and that the hybrid PI/Si-Al oxide film had more excellent dielectric property,and corona-resistant property than the pure PI film.更多还原