高剂量轻离子辐照感生缺陷汲取铂的试验研究

【作者】 胡冬青； 亢宝位； 吴郁； 韩宝东；

【机构】 北京工业大学电子信息与控制工程学院；

【摘要】 研究2×1016 cm-2剂量氦注入感生缺陷形成的高浓度空位,分别在700℃／100min、700℃／100min+900℃／60min和 700℃／100min+1000℃／100min等退火条件下形成的纳米空腔在800℃／120min条件下对铂的汲取作用。结果表明,700℃／100min和 700℃／100min+900℃／60min条件下形成的空位团所汲取的铂大多是替位,因此在氦注入射程末端,Ec-0．23eV缺陷态浓度出现极大,且电活性铂浓度会随空位团长大而增加,最高达到了3．6×1014cm-3。与小剂量He注入汲取铂的最高浓度1．9×1013cm-3相比,纳米空腔汲取铂的浓度提高了一个数量级,将近是低剂量汲取的20倍,这将会大大的缩短器件的开关时间。而1000℃／60min条件下长大的空位团汲取的铂,电活性成分所占比例很小。更多还原

【Abstract】 The voids gettering efficiency of platinum is studied. These voids are induced by He2+ irradiation with dose of 2×1016 cm-2 and evolved under 700℃/100min, 700℃/100min+900℃/60min, and 700℃/100min+ 1000℃/100min. Under the annealing conditions of 700℃/100min and 700℃/100min+900℃/60min, most of the gettered platinum is electrical active. The concentration of trap level of Ec-0.23eV reaches its maximum at the range of He2+ irradiation. The highest peak concentration of electrical platinum is 3.6×1014cm-3. Under low dose He2+ irradiation, the most peak concentration is only 1.9×1013cm-3.It is one power less than our result. But the platinum gettered by the voids evolved under 1000℃/60min has less proportion of electrical active. The concentration of trap level of Ec-0.23eV reaches minimum at the range of He2+ irradiation.更多还原