【作者】 武洁； 方健； 李肇基；

【Author】 Wu lie, Fang Jian, Li Zhaoji (IC Design Center of UESTC, Chengdu, Sichuan, 610054)

【机构】 电子科技大学IC设计中心；

【摘要】 本文提出具有变掺杂结构的双RESURF单晶扩散型LDMOS。并借助二维器件模拟软件MEDICI,给出其表面电场的二维分布和整个结构的电场分布。对N型扩散区,变掺杂区的浓度,尺寸及位置进行优化设计,以获得较好的,折中的击穿电压和导通电阻,更多还原

【Abstract】 A double RESURF diffused LDMOS made of single crystal is presented. It has the characteristic of variation lateral doping and was simulated by MEDICI, two-dimension simulating devices software. Both surface and bulk field distribution of the whole device are given in this paper By optimizing the doping concentration , the size and the location of N-type diffused region and variable doping region, a better trade-off between the breakdown voltage and on-resistance have been achieved.更多还原