【作者】 郭永芳； 郭宇锋； 李肇基； 方健； 朱刚；

【Author】 Yongfang Guo, Yufeng Guo, Z. J. Li, J. Fang, G. Zhu IC Design Center of UESTC, 610054

【机构】 电子科技大学IC设计中心；

【摘要】 本文通过分析具有局域空穴槽结构的SOI LDWOS在反偏时电荷和电场分布,指出柬缚在空穴槽底部Si/SiO2界面的反型层空穴是提高器件耐压的主要原因,据此提出界面电荷耐压模型,分析该结构的SOI LDMOS的击穿机理,并将解析结果与MEDICI的模拟结果进行比较,表明该模型能较好的解释该结构的击穿机理。更多还原

【Abstract】 The Distribution of the charge and the electric field was analyzed for a novel SOI LDMOS with local holes trench in the paper. The Breakdown Voltage is increased by the holes that were bond in the bottom of trench. The breakdown model of interface charges was proposed to research the new structure. The comparisons between analytical and simulative results were shown that this model is reasonable.更多还原