【作者】 周蓉； 胡思福； 李肇基； 张庆中；

【Author】 R. Zhou S. F. Hu, Z. J. Li, Q. Z. Zhang( Department of Microelectronic Science & Technology , University of Electronic Science and Technology of China, Chengdu 610054, China)

【机构】 电子科技大学微电子科学与工程系；

【摘要】 本文将深槽隔离应用于双极功率器件,模拟分析与实验结果表明,深槽隔离终端结构能将器件雪击穿电压提高到理想值的95%以上,在不减小本征散热面积的情况下,该结构减小了集电结面积和漏电流器件截止频率和功率增益分别增加33%和1dB。更多还原

【Abstract】 Deep-trench isolation technology is applied to junction termination of bipolar power devices in this paper. The simulation analysis and experimental results indicate, deep-trench structure as junction termination can increase the avalanche breakdown voltage of bipolar power devices to above 95% of the ideal values. Deep-trench termination structure decreases collector junction area and leakage current without lowering dissipation area, which helps improve the frequency characteristics and Kp of bipolar power devices更多还原