【作者】 罗小蓉； 张波； 李肇基；

【机构】 电子科技大学；

【摘要】 通过氧化-刻蚀-沸水处理的方法(BW法)将欧姆接触合金温度从800℃-1200℃降到100℃以下.本文在100℃以下制备了比接触电阻Pc=5-8×10-2Ω.cm2的欧姆接触和理想因子n=1.20-1.25的SiC肖特基二极管。与欧姆接触采用950℃高温合金制各的P型6H-SiC肖特基二极管(B类样品)比较表明,后者较大的串联电阻大大地影响其电学特性。更多还原

【Abstract】 The treatments of oxidation-etching - immersing in boiling water lower the temperature of annealing from 800℃-1200 ℃ to below 100℃. Ohmic contacts with pc of 5-8×10-3Ωcm2 are prepared below 100℃Schottky diodes with ideal factor n=1.25~1.3 are obtained. Compared with P-type SiC devices with Ohmic contacts formed by high temperature(950℃) process, it can be concluded that the series resistance of Sample B can enormously affect the electric performances of the SiC devices.更多还原