【作者】 郑坤； 韩晓东； 张跃飞； 张泽； 郝雅娟； 郭向云；

【Author】 Zheng Kun Han Xiaodong Zhang Yuefei Zhang Ze Hao Yajuan Guo Xiangyun ( Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology,Beijing, 100022; State Key Laboratory of Coal Conversion, Institute of Coal Chemistry,Taiyuan,030001)

【机构】 北京工业大学固体微结构研究所； 中国科学院山西煤化所；

【摘要】 本文利用透射电子显微镜(TEM)研究了碳热还原反应生成的立方碳化硅(β-SiC)纳米线,结果表明在碳化硅纳米线中沿[111]生长方向存在大量的一维无序结构(ODD),并与3C结构交替生长。我们通过选区电子衍射图及高分辨照片,对ODD结构进行了分析,发现了两种无序结构,一种为完全无序结构,另一种为小有序体的无序堆垛结构,并分析了这种小有序体的结构。更多还原

【Abstract】 SiC nanowires synthesized by carbothermal reduction of silicone method are studied by TEM, the results indicate that there are a lot of One-dimensionally disordered (ODD) structures along the direction of [111]. Two kinds of structure can be concluded when the ODD structure is analyzed by using select area electron diffraction (SAED) and HREM. The one is a totally disordered structure, and the other is ODD structure composed by little ordered structures which stow disordered. Finally, these little ordered structures are analyzed.更多还原