【作者】 董骐； 罗蓉平； 张守忠； 杜建； 钟钢； 田凯； 文学春； 刘祥武；

【Author】 Dong Qi Luo Rongping Zhang Shouzhong Du Jian Zhong GangTian Kai Wen Xuechun Liu Xiangwu(Pro. China Limited, Beijing, 100096)

【机构】 北京丹普表面技术有限公司；

【摘要】 本文介绍了气体离子源增强磁控溅射(气离溅射)反应离子镀膜技术和系统配置,特别是首次提出空分气离溅射的新概念,实现了磁控溅射金属镀膜过程和气体离子轰击化学反应过程在真空室内空间上的分离,从而保证空分气离溅射反应离子镀膜过程的长时间稳定性、重复性和一致性。当磁控溅射源采用中频电源驱动、最新开发的气体离子源采用脉冲直流电源后,实现了最佳的设备组合,可镀制出高品质的TiN膜层。更多还原

【Abstract】 A reactive ion plating method and system configuration of Gas Ion source enhanced Magnetron Sputtering ( GIMS) is presented. Especially a new idea of Separate GIMS is first raised to separate in space the MS metallic deposition process and gas ion bombardment chemical reaction process in a vacuum chamber, resulting in the long-time stability, repeatability and consistency in Separate GIMS reactive ion plating process. The best combination is that magnetron-sputtering sources are driven by medium frequency powers and the newly developed gas ion source is driven by a pulsed DC power. With this system high quality TiN deposition can be obtained.更多还原