【作者】 周继承； 何红波； 李义兵；

【Author】 ZHOU Ji-cheng, HE Hong-bo, LI Yi-bingInstitute for computational Science and Informatics, University of Southcentral China, Changsha 410075, P. R. China

【机构】 中南大学计算科学与信息学研究所；

【摘要】 对形成单电子器件的典型串联双隧道结结构模型,通过求解含时薛定谔方程,计算了其隧穿电流与偏压的关系。给出了PbS量子点自组装体系在室温下的Ⅰ—Ⅴ特性模拟数据,结果与实验符合得较好。更多还原

【Abstract】 In this letter, the current-voltage characteristics of a standard double barrier tunneling junctions (DBTJ), which forms single electron devices, is computed by solving the time-dependent Schrodinger equation. The current-voltage characteristic of PbS quantum dots self-assembly systems at room temperature is simulated numerically. The numerically simuated results are in good agreement with the experimental results.更多还原