【作者】 王超； 钟庆东； 周国治； 鲁雄刚； 陈朝轶；

【Author】 Wang Chao~1 Zhong Qingdong~(1*) Chou Kuo-Chih~(1,2) Lu Xionggang~1 Chen Chaoyi~(1,3) (1.School of Materials Science and Engineering,Shanghai University,Shanghai 200072,China;2.School of Metallurgical and Ecological Engineering,University of Science and Technology Beifing,Beijing 100083,China;3.College of Materials Science and Metallurgy Engineering,Guizhou University,Guiyang 550003,China)

【机构】 上海大学材料科学与工程学院； 北京科技大学冶金与生态工程学院； 贵州大学材料科学与冶金工程学院；

【摘要】 应用光电化学方法和 Mott-Schottky 分析技术研究了 H62黄铜在0.1%wt 硫酸钠和氯化钠两种电解质溶液中的脱锌机制。结果表明,H62黄铜在0.1%wt 硫酸钠溶液中为溶解-再沉积的脱锌机制,而在0.1%wt 氯化钠溶液中为锌的优先溶解机制。黄铜脱锌前, 由于氯离子的侵蚀,表面氧化亚铜层的光量子效率降低。在硫酸钠溶液中,黄铜脱锌前后表面膜层均为 p 型半导体;而在氯化钠中黄铜脱锌前表面膜层为 p 型半导体,脱锌后表面膜层为 n 型半导体。更多还原

【Abstract】 Dezincification mechanism of H62 brass in 0.1% sodium sulfate solution and sodium chloride solution was investigated by photoelectrochemistry method and Mott-Schottky analysis technology. The dezincification mechanism of H62 brass was resolution-redeposit ion theory in 0.1% sodium sulfate solution and was preferential solution of zinc theory in 0.1%wt sodium chloride solution. Due to aggression of chloride ion, quantum-optical efficiency of cuprous oxide film was lower than in sodium sulfate solution before dezincification. In 0.1%wt Na₂SO₄ solution, the oxide film on the surface of brass was p type semiconductor before and after dezincification but in 0.1%wt NaC1 solution, the oxide film was p type semiconductor before dezincification and was n type semiconductor after dezincification.更多还原