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H62黄铜在电解质溶液中的脱锌腐蚀机制研究
Research on Mechanism of Dezincification of H62 Brass in Electrolyte
【Author】 Wang Chao~1 Zhong Qingdong~(1*) Chou Kuo-Chih~(1,2) Lu Xionggang~1 Chen Chaoyi~(1,3) (1.School of Materials Science and Engineering,Shanghai University,Shanghai 200072,China;2.School of Metallurgical and Ecological Engineering,University of Science and Technology Beifing,Beijing 100083,China;3.College of Materials Science and Metallurgy Engineering,Guizhou University,Guiyang 550003,China)
【机构】 上海大学材料科学与工程学院; 北京科技大学冶金与生态工程学院; 贵州大学材料科学与冶金工程学院;
【摘要】 应用光电化学方法和 Mott-Schottky 分析技术研究了 H62黄铜在0.1%wt 硫酸钠和氯化钠两种电解质溶液中的脱锌机制。结果表明,H62黄铜在0.1%wt 硫酸钠溶液中为溶解-再沉积的脱锌机制,而在0.1%wt 氯化钠溶液中为锌的优先溶解机制。黄铜脱锌前, 由于氯离子的侵蚀,表面氧化亚铜层的光量子效率降低。在硫酸钠溶液中,黄铜脱锌前后表面膜层均为 p 型半导体;而在氯化钠中黄铜脱锌前表面膜层为 p 型半导体,脱锌后表面膜层为 n 型半导体。
【Abstract】 Dezincification mechanism of H62 brass in 0.1% sodium sulfate solution and sodium chloride solution was investigated by photoelectrochemistry method and Mott-Schottky analysis technology. The dezincification mechanism of H62 brass was resolution-redeposit ion theory in 0.1% sodium sulfate solution and was preferential solution of zinc theory in 0.1%wt sodium chloride solution. Due to aggression of chloride ion, quantum-optical efficiency of cuprous oxide film was lower than in sodium sulfate solution before dezincification. In 0.1%wt Na2SO4 solution, the oxide film on the surface of brass was p type semiconductor before and after dezincification but in 0.1%wt NaC1 solution, the oxide film was p type semiconductor before dezincification and was n type semiconductor after dezincification.
【Key words】 photoelectrochemistry; mott-schottky analysis; brass; dezincification mechanism; preferential solution; resolutionredeposit ion;
- 【会议录名称】 2008年全国冶金物理化学学术会议专辑(上册)
- 【会议名称】2008年全国冶金物理化学学术会议
- 【会议时间】2008-08
- 【会议地点】中国贵州贵阳
- 【分类号】TG172
- 【主办单位】中国自然科学基金委员会工程与材料学部、中国有色金属学会冶金物理化学学术委员会、中国金属学会冶金物理化学学术委员会、中国稀土学会