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H62黄铜在电解质溶液中的脱锌腐蚀机制研究

Research on Mechanism of Dezincification of H62 Brass in Electrolyte

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【作者】 王超钟庆东周国治鲁雄刚陈朝轶

【Author】 Wang Chao~1 Zhong Qingdong~(1*) Chou Kuo-Chih~(1,2) Lu Xionggang~1 Chen Chaoyi~(1,3) (1.School of Materials Science and Engineering,Shanghai University,Shanghai 200072,China;2.School of Metallurgical and Ecological Engineering,University of Science and Technology Beifing,Beijing 100083,China;3.College of Materials Science and Metallurgy Engineering,Guizhou University,Guiyang 550003,China)

【机构】 上海大学材料科学与工程学院北京科技大学冶金与生态工程学院贵州大学材料科学与冶金工程学院

【摘要】 应用光电化学方法和 Mott-Schottky 分析技术研究了 H62黄铜在0.1%wt 硫酸钠和氯化钠两种电解质溶液中的脱锌机制。结果表明,H62黄铜在0.1%wt 硫酸钠溶液中为溶解-再沉积的脱锌机制,而在0.1%wt 氯化钠溶液中为锌的优先溶解机制。黄铜脱锌前, 由于氯离子的侵蚀,表面氧化亚铜层的光量子效率降低。在硫酸钠溶液中,黄铜脱锌前后表面膜层均为 p 型半导体;而在氯化钠中黄铜脱锌前表面膜层为 p 型半导体,脱锌后表面膜层为 n 型半导体。

【Abstract】 Dezincification mechanism of H62 brass in 0.1% sodium sulfate solution and sodium chloride solution was investigated by photoelectrochemistry method and Mott-Schottky analysis technology. The dezincification mechanism of H62 brass was resolution-redeposit ion theory in 0.1% sodium sulfate solution and was preferential solution of zinc theory in 0.1%wt sodium chloride solution. Due to aggression of chloride ion, quantum-optical efficiency of cuprous oxide film was lower than in sodium sulfate solution before dezincification. In 0.1%wt Na2SO4 solution, the oxide film on the surface of brass was p type semiconductor before and after dezincification but in 0.1%wt NaC1 solution, the oxide film was p type semiconductor before dezincification and was n type semiconductor after dezincification.

【基金】 国家自然科学基金(50571059,50615024);2007教育部新世纪优秀人才支持计划项目(NCET-07-0536)
  • 【会议录名称】 2008年全国冶金物理化学学术会议专辑(上册)
  • 【会议名称】2008年全国冶金物理化学学术会议
  • 【会议时间】2008-08
  • 【会议地点】中国贵州贵阳
  • 【分类号】TG172
  • 【主办单位】中国自然科学基金委员会工程与材料学部、中国有色金属学会冶金物理化学学术委员会、中国金属学会冶金物理化学学术委员会、中国稀土学会
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