【作者】 刘力锋； 康晋锋； 王漪； 孔令刚； 张兴； 韩汝琦；

【Author】 Liu Lifeng, Kang Jinfeng, Wang Yi, Kong Linggang, Zhang Xing, Han Ruqi (Institute of Microelectronics , Peking University, Beijing 100871 , China)

【机构】 北京大学微电子学研究所；

【摘要】 利用溶胶-凝胶法(sol-gel)结合不同退火条件在Si衬底上成功制备了Co掺杂的TiO2薄膜。利用交变梯度磁强计(AGM)测最了薄膜样品的磁特性,X射线衍射(XRD)测量了样品的结构特性,并利用X射线光电子谱(XPS)分析了样品的元素价态。研究表明,空气中600℃退火的样品没有观察到铁磁性;而空气中退火的样品再经过含氧气氛下400℃退火处理后,样品显示出室温铁磁性。研究结果显示,含氢气氛环境下退火后,样品有较多的氧空位产生,但没有观察到Co金属团簇存在的证据。实验结果说明,Co掺杂的TiO2薄膜样品的室温铁磁性可能源于Co离子氧空位的效应,而不是由金属co团簇引起的。更多还原

【Abstract】 Co-doped TiO2 films were successfully prepared on Si (001) substrates by sol-gel method and post-annealing under different conditions. Magnetic properties of the films were examined using a mi-cromag TM alternating gradient magnetometer (AGM) with the magnetic field applied to the film plane. The X-ray diffraction (XRD) was used to analyze the structural properties of films. The X-ray photoelectron spectroscopy (XPS) measurements were performed to examine the valence states of elements in the films. Co-doped TiO2 films annealed in air are non-ferromagnetic at room temperature. However, Co-doped TiO2 films show room-temperature ferromagnetism (RTFM) after further hydrogenation process. Co clusters were not observed in the hydrogenated film. In comparison with the Co-doped TiO2 films annealed in air, more oxygen vacancies are formed in the hydrogenated film. These results indicate that RTFM may be intrinsic in the hydrogenated film and is not originated from the Co.更多还原