An Analytical Approach to the 2-D Distribution of the Electric Field and Breakdown Voltage in SOI lateral power Transistors

【作者】 郭宇锋；

【Author】 Yufeng Guo~1 Bo Zhang~2 Li Zhaoji~2 (1 College of Optoelectronic Engineering,Nanjing University of Posts and Telecommunications,Nanjing,Jiangsu 210003,China 2 Center of IC Design,University of Electronic Science and Technology of China,Chengdu,Sichuan,610054,China)

【机构】 南京邮电大学光电工程学院微电子系；

【摘要】 <正>In this paper,a novel analytical model to investigate the electric field distribution and breakdown model of SOI RESURF devices is proposed based on solving 2-D Poisson equation.The analytical expressions of 2-D electrostatic potential and electric fields distributions in top Si layer are derived for both the complete and incomplete depletion cases.The breakdown voltages are quantitatively investigated in detail as the function of key geometry parameters.The validity of the model is demonstrated by a fair agreement between the analytical results and numerical simulations.In comparison with other models,the approach can be used to explore the physical insights of the lateral and vertical breakdowns for the completely/incompletely depleted drift regions.更多还原

【Abstract】 In this paper,a novel analytical model to investigate the electric field distribution and breakdown model of SOI RESURF devices is proposed based on solving 2-D Poisson equation.The analytical expressions of 2-D electrostatic potential and electric fields distributions in top Si layer are derived for both the complete and incomplete depletion cases.The breakdown voltages are quantitatively investigated in detail as the function of key geometry parameters.The validity of the model is demonstrated by a fair agreement between the analytical results and numerical simulations.In comparison with other models,the approach can be used to explore the physical insights of the lateral and vertical breakdowns for the completely/incompletely depleted drift regions.更多还原