【作者】 王永光； 赵永武；

【Author】 Wang Yongguang Zhao Yongwu (Department of Mechanical Engineering,Jiangnan University,Jiangsu Wuxi 214122)

【机构】 江南大学机械工程学院；

【摘要】 化学机械抛光(CMP)技术是实现超大规模集成电路(ULSI)多层布线平坦化的唯一技术。就国内外关于 CMP 材料原子/ 分子磨损机理的试验和模型研究状况和发展进行了评述。指出现有微观试验和模型描述 CMP 材料原子/分子磨损过程中存在的问题, 提出在原子/分子量级的材料磨损机理研究中引入原子/分子能量理论,以便深入揭示 CMP 材料原子/分子去除机理,为建立精确控制 CMP 过程提供理论依据。更多还原

【Abstract】 Chemical mechanical polishing(CMP)is the only method known to achieve global planarization in the ULSI for intedevel dielectrics.In this paper,a review is given on the present state of and recent process and problems in the study on material removal model based on molecular-scale wear mechanism during the CMP process.At the molecular scale,it is supposed to investigate the material removal mechanism from the energy perspective so as to clarify the disputes on the current experimental observations during the CMP process.It also offers guidance to the control and optimization of the polishing process in addition to its underlying theoretical foundation.更多还原