【作者】 张伟； 路新春； 刘宇宏； 雒建斌；

【Author】 ZHANG Wei LU Xinchun LIU Yuhong LUO Jianbin (State Key Laboratory of Tribology,Tsinghua University,Beijing 100084,China)

【机构】 清华大学摩擦学国家重点实验室；

【摘要】 研究了氨基乙酸-H₂O₂体系抛光液中铜的化学机械抛光行为．通过动电位极化扫描技术和 X 射线光电子能谱仪分析了抛光液中氧化剂和络合剂等化学组分在铜化学机械抛光过程中的作用．结果表明,铜在抛光液中氧化剂的作用下表面钝化,钝化层的存在使氨基乙酸发挥有效络合作用,实现化学机械抛光过程中铜的材料去除,提高抛光去除率．同时,抛光实验结果表明,低压力抛光条件下,抛光液化学作用使抛光后铜表面出现腐蚀坑,腐蚀坑强度随抛光过程相对运动速率的增大而减小,随着抛光过程机械作用的增强, 抛光样品表面腐蚀坑消失,WYKO 形貌结果表明抛光质量得到改善．同时抛光过程中相对运动速度一方面增强机械作用,从而增大抛光去除率,另一方面,速度增大所引发的润滑效应又在一定程度上降低抛光去除率,化学机械抛光过程中这一临界相对运动速度为1 m/s．更多还原

【Abstract】 Chemical mechanical polishing behavior of copper in glycine-H₂O₂ system was studied.The polishing experiments were performed on polishing test-bed CP-4.Also the chemical mechanisms of slurry components were studied by potential scan technique and X-ray photoelectron spectroscopy.Results shows that,the complex agent glycine helps to improve the chemical effect and then improve the material removal rate,but it can only take significant effect with the existence of oxidizer as H₂O₂.Because of the chemical effect of polishing slurry,when the polishing pressure is low,pits occur on the polished surface.With the increasing of polishing pressure,pits disappear and the surface roughness reach as around 3-5nm.Al.so,relative velocity in the polishing process plays two roles,with its increasing,on one side,because of the mechanical effect in Preston model,material removal rate increases,on the other side,the slurry film in the intermediate becomes thicker,and then material removal rate decreases because of the lubricating property.The polishing experiments shows that 1m/s is the critical velocity.更多还原